On prognosis of influence of radiation processing on transport of charge carriers

Abstract

In this paper we introduce a model for analysis of influence of radiation processing on transport of charge carriers in p-n-junctions, which were manufactured in multilayer structures. The model gives a possibility to take into account larger quantity of factors in comparison with existing in literature models. We also introduce an analytical approach to analyze transport of charge carriers. The approach makes it possible to simultaneously take into account changes of properties of materials in space and time and as well as the nonlinearity of the considered transport.